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Proceedings Paper

Preparation, morphology, and electrical properties of TiN1-xCx thin layers
Author(s): Z. Wokulski
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Paper Abstract

The TiN1-xCx thin layers were obtained by CVD technique using a flow method from reactant gas mixture: TiCl4(g)-N2(g)-CCl4(g)-H2(g). The obtained thin layers were investigated using metalographic, SEM and TEM techniques. Phase composition and lattice parameters were determined by the x-ray method using Inel, Philips and Siemens diffractometers. It was found that the morphology of the thin layers depends strongly on the temperature and time of deposition, type of growth substrate and also the molar ratios N/Ti and C/Ti in the reactant gas mixtures. Mirror- like and fine-grained thin films were obtained at temperatures of the growth substrate T <EQ 1100 degrees C. TEM examinations of the microstructure of the TiN1-xCx thin layers deposited on polycrystalline and single crystal Cu plates were also carried out. Factors responsible for the presence of a high density of dislocations in the examined layers were found. From DC measurements of resistance R in the temperature range 300- 4.2 K the residual resistance ratio RRR, superconducting transition temperature Tc, transition width (Delta) Tc and temperature coefficient of resistivity TCR were obtained.

Paper Details

Date Published: 13 June 1997
PDF: 5 pages
Proc. SPIE 3179, Solid State Crystals in Optoelectronics and Semiconductor Technology, (13 June 1997); doi: 10.1117/12.276203
Show Author Affiliations
Z. Wokulski, Univ. of Silesia (Poland)


Published in SPIE Proceedings Vol. 3179:
Solid State Crystals in Optoelectronics and Semiconductor Technology
Antoni Rogalski; Jaroslaw Rutkowski; Andrzej Majchrowski; Jerzy Zielinski, Editor(s)

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