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Proceedings Paper

Detection of oxygen in porous silicon by nuclear reaction 16O(alpha,alpha)16O
Author(s): Miroslaw Kulik; J. Zuk; H. Krzyzanowska; T. J. Ochalski; A. P. Kobzev
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Paper Abstract

Elastic Recoil Detection and Rutherford Backscattering methods were used to obtain the depth profiles of hydrogen, oxygen and silicon atoms in porous Si layers on Si substrates. Large values of the oxygen concentration suggest a high oxidation degree of the specific surface of porous Si. It supports our earlier hypothesis, based on experimental evidence, that a formation of silicon oxidation oxides in porous layers is essential to the blue emission of light from this material.

Paper Details

Date Published: 13 June 1997
PDF: 3 pages
Proc. SPIE 3179, Solid State Crystals in Optoelectronics and Semiconductor Technology, (13 June 1997); doi: 10.1117/12.276196
Show Author Affiliations
Miroslaw Kulik, Maria Curie-Sklodowska Univ. (Poland)
J. Zuk, Maria Curie-Sklodowska Univ. (Poland)
H. Krzyzanowska, Maria Curie-Sklodowska Univ. (Poland)
T. J. Ochalski, Maria Curie-Sklodowska Univ. (Poland)
A. P. Kobzev, Joint Institute for Nuclear Research (Russia)

Published in SPIE Proceedings Vol. 3179:
Solid State Crystals in Optoelectronics and Semiconductor Technology
Antoni Rogalski; Jaroslaw Rutkowski; Andrzej Majchrowski; Jerzy Zielinski, Editor(s)

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