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Proceedings Paper

Half-micron excimer laser lithography using a 1:1 broadband catadioptric lens with a half-circle field
Author(s): Dunwu Lu; Huijie Huang; Yu Yan; Longlong Du; Ruichang Gao
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Paper Abstract

We have designed and constructed an excimer laser lithography system at 248.3 nm. The system consists of a KrF excimer laser illuminator and a 1:1 broadband catadioptric projection lens with a half circle image field. Resolutions of 0.6 micrometers L/S and 0.5 micrometers L/S are obtained in AZ1350J resist and PMMA resist respectively.

Paper Details

Date Published: 7 July 1997
PDF: 5 pages
Proc. SPIE 3051, Optical Microlithography X, (7 July 1997); doi: 10.1117/12.276055
Show Author Affiliations
Dunwu Lu, Shanghai Institute of Optics and Fine Mechanics (China)
Huijie Huang, Shanghai Institute of Optics and Fine Mechanics (China)
Yu Yan, Shanghai Institute of Optics and Fine Mechanics (China)
Longlong Du, Shanghai Institute of Optics and Fine Mechanics (China)
Ruichang Gao, Shanghai Institute of Optics and Fine Mechanics (China)


Published in SPIE Proceedings Vol. 3051:
Optical Microlithography X
Gene E. Fuller, Editor(s)

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