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Proceedings Paper

Effects of excimer laser radiation on attenuated phase-shift masking materials
Author(s): Bruce W. Smith; Lena Zavyalova; Shahid A. Butt; Anatoly Bourov; Nathan Bergman; Carlos A. Fonseca; Zulfiquar Alam
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Paper Abstract

The use of attenuated phase-shift masking materials is being considered as one of the key resolution enhancement techniques for sub-0.18 micrometers lithography. In addition to proper optical performance, films for use at DUV and 193 nm wavelengths require suitable plasma etch characteristics and stability at mask exposure levels of pulse excimer lasers. This may limit practical materials to those which allow suitably volatile etch bi-products and possess stable stoichiometric composition. Several film families have been produced which can deliver a (pi) phase shift and 4 - 15% transmission within a single films thickness including Al/AlN, MoSiO, TaSiO, Zr/ZrN, SixNy, and TaN/Si3N4. Of these materials, TaSiO, SixNy, and TaN/Si3N4, allow for adequate plasma etch performance with selectivity to fused silica and resist. Excimer laser 193 nm exposure at fluences corresponding to mask exposure levels show some degree of optical degradation of materials prone to oxidation.

Paper Details

Date Published: 7 July 1997
PDF: 9 pages
Proc. SPIE 3051, Optical Microlithography X, (7 July 1997); doi: 10.1117/12.276051
Show Author Affiliations
Bruce W. Smith, Rochester Institute of Technology (United States)
Lena Zavyalova, Rochester Institute of Technology (United States)
Shahid A. Butt, Rochester Institute of Technology (United States)
Anatoly Bourov, Rochester Institute of Technology (United States)
Nathan Bergman, Rochester Institute of Technology (United States)
Carlos A. Fonseca, Rochester Institute of Technology (United States)
Zulfiquar Alam, Rochester Institute of Technology (United States)


Published in SPIE Proceedings Vol. 3051:
Optical Microlithography X
Gene E. Fuller, Editor(s)

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