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Proceedings Paper

Performance of small-field 193-nm exposure system
Author(s): Dohoon Kim; Kag Hyeon Lee; Jong-Soo Kim; Sang-Soo Choi; Hye-Keun Oh; Hai Bin Chung; Hyung Joun Yoo
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Paper Abstract

A small field ArF excimer laser based exposure tool has been designed and fabricated for the 193 nm lithography process research and exposure tool development. The projection optics based upon Schwartzchild concept has a specification of 3 mm field diameter, X5 reduction ratio, and 0.5 NA. The exposure tool uses an unnarrowed ArF excimer laser as a light source, and uses a fly's eye homogenizer to produce a reticle illumination uniformity of < +/- 5% RMS/pulse. The results of preliminary exposure with PMMA resist coincided with simulation and expectation, and advanced imaging tests carrying out for various resists. In this paper, we report the detailed system parameters and characterization data of the small field ArF excimer laser exposure tool and some of advances in 193 nm lithography that have been achieved with the system.

Paper Details

Date Published: 7 July 1997
PDF: 11 pages
Proc. SPIE 3051, Optical Microlithography X, (7 July 1997); doi: 10.1117/12.276048
Show Author Affiliations
Dohoon Kim, Electronics and Telecommunications Research Institute (South Korea)
Kag Hyeon Lee, Electronics and Telecommunications Research Institute (South Korea)
Jong-Soo Kim, Electronics and Telecommunications Institute (South Korea)
Sang-Soo Choi, Electronics and Telecommunications Research Institute (South Korea)
Hye-Keun Oh, Hanyang Univ. (South Korea)
Hai Bin Chung, Electronics and Telecommunications Research Institute (South Korea)
Hyung Joun Yoo, Electronics and Telecommunications Research Institute (South Korea)


Published in SPIE Proceedings Vol. 3051:
Optical Microlithography X
Gene E. Fuller, Editor(s)

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