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Proceedings Paper

Characteristics of Ge-based ARL for DUV lithography
Author(s): Yongbeom Kim; Dong-Wan Kim; Hoyoung Kang; Joo-Tae Moon; Moon-Yong Lee
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Paper Abstract

Germanium based ARL (Anti Reflective Layer) having high conformality over topography and removable during resist strip process was developed. Its various characteristics were investigated. The ARLs were composed with GeN, and (Ge,Si)Nx and fabricated by reactive RF sputtering. The optical constants of Ge based materials were measured and the ARL performance for DUV lithography was obtained. Since the GENx is dissolved in water during resist develop process, it can not be used. Therefore, silicon was added to solve this problem. Thin film characteristics of (Ge,Si)Nx compound were analyzed using XRD, XPS, AES, SEM. The ARL performance was confirmed by resist patterning. Because the (Ge,Si)Nx material is removable by H2SO4 strip, yet most of current inorganic ARL is not, it has advantages for process simplicity.

Paper Details

Date Published: 7 July 1997
PDF: 10 pages
Proc. SPIE 3051, Optical Microlithography X, (7 July 1997); doi: 10.1117/12.276042
Show Author Affiliations
Yongbeom Kim, Samsung Electronics Co., Ltd. (South Korea)
Dong-Wan Kim, Samsung Electronics Co., Ltd. (South Korea)
Hoyoung Kang, Samsung Electronics Co., Ltd. (South Korea)
Joo-Tae Moon, Samsung Electronics Co., Ltd. (South Korea)
Moon-Yong Lee, Samsung Electronics Co., Ltd. (South Korea)


Published in SPIE Proceedings Vol. 3051:
Optical Microlithography X
Gene E. Fuller, Editor(s)

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