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Proceedings Paper

Edge-phase-shifting lithography for sub-0.3-μm T-gates
Author(s): Axel Huelsmann; Fred Becker; Jochen Hornung; Dagmar Koehler; Joachim Schneider
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Paper Abstract

We have developed an edge-phase-shifting (EPS) lithography for the fabrication of sub 0.3 micrometers T-gates using a 5X i-line stepper with a 0.4 numerical aperture lens. Two exposures have to be accurately aligned on each other within 150 nm. The first exposure uses EPS lithography and defines the gate length in a negative resist. The second exposure defines the cross-section of the T-gate. Using this lithography, hetero structure field effect transistors can be fabricated.

Paper Details

Date Published: 7 July 1997
PDF: 9 pages
Proc. SPIE 3051, Optical Microlithography X, (7 July 1997); doi: 10.1117/12.276025
Show Author Affiliations
Axel Huelsmann, Fraunhofer Institut fuer Angewandte Festkoerperphysik (Germany)
Fred Becker, Fraunhofer Institut fuer Angewandte Festkoerperphysik (Germany)
Jochen Hornung, Fraunhofer Institut fuer Angewandte Festkoerperphysik (Germany)
Dagmar Koehler, Fraunhofer Institut fuer Angewandte Festkoerperphysik (Germany)
Joachim Schneider, Fraunhofer Institut fuer Angewandte Festkoerperphysik (Germany)


Published in SPIE Proceedings Vol. 3051:
Optical Microlithography X
Gene E. Fuller, Editor(s)

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