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Proceedings Paper

Minimization of DUV multi-interference effect in 0.25-um device fabrication
Author(s): Ju-Hwan Kim; Seung-Chan Moon; Bong-Sang Ko; Hee Kook Park; Tae-Gook Lee; Ki-Soo Shin; Daehee Kim
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Paper Abstract

Pattern collapse, CD (critical dimension) non-uniformity, and poor pattern fidelity induced by the multi-interference effect of DUV process are currently becoming significant issues to an actual process implementation. In the micro- device fabrication of DRAM, capacitor storage node patterning designed with a rectangular shape of sub- quartermicron spacewidth is critically involved in these issues dependent on the process scheme of capacitor formation. In this study, we have evaluated the effect of barrier layers such as thin poly film, inorganic and organic BARC to minimize a thin film multi-interference effect. In addition, illumination source effect during the exposure process and process polarity effect of a positive and negative tone process were also experimented to settle down process control stability.

Paper Details

Date Published: 7 July 1997
PDF: 9 pages
Proc. SPIE 3051, Optical Microlithography X, (7 July 1997); doi: 10.1117/12.276018
Show Author Affiliations
Ju-Hwan Kim, Hyundai Electronics Industries Co., Ltd. (South Korea)
Seung-Chan Moon, Hyundai Electronics Industries Co., Ltd. (South Korea)
Bong-Sang Ko, Hyundai Electronics Industries Co., Ltd. (South Korea)
Hee Kook Park, Hyundai Electronics Industries Co., Ltd. (South Korea)
Tae-Gook Lee, Hyundai Electronics Industries Co., Ltd. (South Korea)
Ki-Soo Shin, Hyundai Electronics Industries Co., Ltd. (South Korea)
Daehee Kim, Hyundai Electronics Industries Co., Ltd. (South Korea)


Published in SPIE Proceedings Vol. 3051:
Optical Microlithography X
Gene E. Fuller, Editor(s)

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