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Proceedings Paper

Understanding across chip line width variation: the first step toward optical proximity correction
Author(s): Lars W. Liebmann; Antoinette F. Molless; Richard A. Ferguson; Alfred K. K. Wong; Scott M. Mansfield
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Paper Abstract

The prerequisite to successful optical proximity correction is an in depth understanding of the relevant parameters leading to patterning inaccuracies. The work presented in this paper is based on a test chip specifically designed to investigate sources of 1D line width errors, deemed the most critical for optical proximity correction. Data are presented relating line width errors to pitch and pattern density and highlighting the complex interactions between these two main contributors of line width error. The goal of this paper is not to derive a mathematical model for line width variation in etched polysilicon line structures but merely to qualitatively bound the complex interaction of pitch and pattern density based line width variation. The results of this investigation indicate that pattern density has a very significant effect on line width and that lithography, not just reactive ion etch, is significantly impacted by pattern density.

Paper Details

Date Published: 7 July 1997
PDF: 13 pages
Proc. SPIE 3051, Optical Microlithography X, (7 July 1997); doi: 10.1117/12.276015
Show Author Affiliations
Lars W. Liebmann, IBM Microelectronics Div. (United States)
Antoinette F. Molless, IBM Microelectronics Div. (United States)
Richard A. Ferguson, IBM Microelectronics Div. (United States)
Alfred K. K. Wong, IBM Microelectronics Div. (United States)
Scott M. Mansfield, IBM Microelectronics Div. (United States)


Published in SPIE Proceedings Vol. 3051:
Optical Microlithography X
Gene E. Fuller, Editor(s)

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