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Proceedings Paper

Optical proximity correction in DRAM cell using a new statistical methodology
Author(s): Akio Misaka; Akihiko Goda; Koji Matsuoka; Hiroyuki Umimoto; Shinji Odanaka
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Paper Abstract

An optical proximity correction algorithm based on statistical methodology is developed. The response surface function (RSF) for the CD in the lithographic process is extended by introducing variables for the mask pattern size. The values of process parameters and mask pattern size are concurrently optimized by using the RSF. This methodology allows design for manufacturability, considering error distributions of process parameters such as focus position and exposure dose. The algorithm is applied to a DRAM cell pattern. The result indicates the annular illumination with larger coherency than that of the conventional illumination improve the CD limited yield.

Paper Details

Date Published: 7 July 1997
PDF: 11 pages
Proc. SPIE 3051, Optical Microlithography X, (7 July 1997); doi: 10.1117/12.275994
Show Author Affiliations
Akio Misaka, Matsushita Electric Industrial Co., Ltd. (Japan)
Akihiko Goda, Matsushita Electric Industrial Co., Ltd. (Japan)
Koji Matsuoka, Matsushita Electronics Corp. (Japan)
Hiroyuki Umimoto, Matsushita Electric Industrial Co., Ltd. (Japan)
Shinji Odanaka, Matsushita Electric Industrial Co., Ltd. (Japan)


Published in SPIE Proceedings Vol. 3051:
Optical Microlithography X
Gene E. Fuller, Editor(s)

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