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Proceedings Paper

Optical proximity correction of alternating phase-shift masks for 0.18-um KrF lithography
Author(s): Tadao Yasuzato; Shinji Ishida; Satomi Shioiri; Hiroyoshi Tanabe; Kunihiko Kasama
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Paper Abstract

Optical proximity correction (OPC) was applied to alternating phase shift masks to improve printed resist pattern fidelity. Mask patterns were modified with jog type corrections. DRAM cell patterns were exposed by using a 0.55 NA, 0.36/0.55 (sigma) , KrF excimer laser stepper onto 0.5 micrometers thick chemically amplified negative resist. With 0.55 (sigma) , OPC was effective and printed resist pattern was very close to designed one. However, with 0.36 (sigma) , large pattern deformation was observed due to coma aberration.

Paper Details

Date Published: 7 July 1997
PDF: 12 pages
Proc. SPIE 3051, Optical Microlithography X, (7 July 1997); doi: 10.1117/12.275992
Show Author Affiliations
Tadao Yasuzato, NEC Corp. (Japan)
Shinji Ishida, NEC Corp. (Japan)
Satomi Shioiri, NEC Corp. (Japan)
Hiroyoshi Tanabe, NEC Corp. (Japan)
Kunihiko Kasama, NEC Corp. (Japan)

Published in SPIE Proceedings Vol. 3051:
Optical Microlithography X
Gene E. Fuller, Editor(s)

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