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Proceedings Paper

Optical proximity effects correction at 0.25 um incorporating process variations in lithography
Author(s): Alexander V. Tritchkov; Michael L. Rieger; John P. Stirniman; Anthony Yen; Kurt G. Ronse; Geert Vandenberghe; Luc Van den Hove
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Paper Abstract

We study the optical proximity effect and its correction using empirically derived models for DUV lithography taking into account random process variations. The sensitivity of corrected configurations to different sources of process variation (exposure dose, defocus) is evaluated. For correction at a centered condition (optimum dose, zero defocus), problems may arise in ill-conditioned areas (inside corners of T-shape features, butting line-ends, etc.), when going away from the best focus and/or exposure dose, within the exposure/defocus window. Correction for sharp corners (aggressive correction) shows a stronger sensitivity to defocus than less corner sharpening (conservative correction). Furthermore, we study what types of design configurations tend to print poorly with process variations and investigate alternative correction optimization schemes that stabilize the printing performance in such areas. Various optimization alternatives to improve performance within the process window are evaluated.

Paper Details

Date Published: 7 July 1997
PDF: 13 pages
Proc. SPIE 3051, Optical Microlithography X, (7 July 1997); doi: 10.1117/12.275990
Show Author Affiliations
Alexander V. Tritchkov, Interuniv. Micro-Elektronica Centrum vzw (Belgium)
Michael L. Rieger, Precim Co. (United States)
John P. Stirniman, Precim Co. (United States)
Anthony Yen, Texas Instruments (United States)
Kurt G. Ronse, Interuniv. Micro-Elektronica Centrum vzw (Belgium)
Geert Vandenberghe, Interuniv. Micro-Elektronica Centrum vzw (Belgium)
Luc Van den Hove, Interuniv. Micro-Elektronica Centrum vzw (Belgium)

Published in SPIE Proceedings Vol. 3051:
Optical Microlithography X
Gene E. Fuller, Editor(s)

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