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Proceedings Paper

Experimental results on optical proximity correction with variable-threshold resist model
Author(s): Nicolas B. Cobb; Avideh Zakhor; Mehran Reihani; Farvardin Jahansooz; Vijaya N.V. Raghavan
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Paper Abstract

In previous work we combined fast aerial image simulation with a closed-loop Optical Proximity Correction (OPC) control system to generate pre-compensated mask geometries which account for pattern transfer distortion effects at small feature sizes. We also presented the variable- threshold resist (VTR) model in which an image-dependent threshold is used to calculate linewidths directly from the image intensity. The model parameters can be determined by `tuning' the model with linewidth measurements from chosen sample sites on the wafer. In this paper, we present verify our OPC approach experimentally by showing after etch SEM wafers of corrected and uncorrected designs. In doing so, we show that (1) OPC can eliminate bridging effects in uncorrected designs, (2) VTR model is fairly insensitive to process variations and (3) mask writing effects are important and cannot be ignored.

Paper Details

Date Published: 7 July 1997
PDF: 11 pages
Proc. SPIE 3051, Optical Microlithography X, (7 July 1997); doi: 10.1117/12.275977
Show Author Affiliations
Nicolas B. Cobb, Signamask Inc. (United States)
Avideh Zakhor, Univ. of California/Berkeley (United States)
Mehran Reihani, Hewlett-Packard Co. (United States)
Farvardin Jahansooz, Hewlett-Packard Co. (United States)
Vijaya N.V. Raghavan, Hewlett-Packard Co. (United States)


Published in SPIE Proceedings Vol. 3051:
Optical Microlithography X
Gene E. Fuller, Editor(s)

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