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Proceedings Paper

Detecting lithography's variations: new types of defects for automatic inspection machines
Author(s): Paul Gudeczauskas; Erez Ravid
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Paper Abstract

Photolithography for silicon semiconductor device manufacturing is a crucial technology in the race to denser and more highly integrated circuits. To achieve an acceptable wafer throughput, most steppers use a combination of global and site-to-site alignment. Focus and exposure are controlled based on a limited number of fields. Post develop evaluation of the pattern quality is typically limited to a few fields on a few wafers. Focus and exposure shifts cause small variations in CDs that rapidly become critical yield limiters. Trends toward larger stepper fields and wafers render very small variations in magnification, distortion, rotation and translation of the patten. Rapid closed loop feedback of a photolithography problem prior to etch is critical for measuring and controlling stepper performance, reducing wafer scrap and yield loss. In this article we will demonstrate how sub-micron variations can be quickly detected with laser scanning tool, combined with pixel-to- pixel image processing. The WF-720 automatic defect inspection tool, utilizing a unique PDI configuration, enables detection of minor changes in pattern shapes based on the global pixel population behavior of the distorted patterns on the wafer.

Paper Details

Date Published: 7 July 1997
PDF: 11 pages
Proc. SPIE 3050, Metrology, Inspection, and Process Control for Microlithography XI, (7 July 1997); doi: 10.1117/12.275939
Show Author Affiliations
Paul Gudeczauskas, Fairchild Semiconductor (United States)
Erez Ravid, Orbot Instruments Ltd. (Israel)

Published in SPIE Proceedings Vol. 3050:
Metrology, Inspection, and Process Control for Microlithography XI
Susan K. Jones, Editor(s)

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