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Proceedings Paper

Characterization of defect detection schemes using rigorous 3D EM field simulation
Author(s): Aaron L. Swecker; Andrzej J. Strojwas; Ady Levy; Bobby R. Bell
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Paper Abstract

Through the use of the physically based electromagnetic field simulator (METRO), various defect detection schemes are investigated for the post CMP inspection application. In particular, detection o the filed tungsten micro-score or residual, a critical CMP process defect, is evaluated for both open and densely patterned areas. Using METRO, high resolution bright field is shown to have superior sensitivity to lower resolution bright field. High resolution bright field also demonstrates the ability to size the defect. Several illumination bandwidths and optical resolutions are studied in the presence of CMP color noise or oxide thickness variation.Ultra broad band bright field detection is shown to have reduced color noise compared to traditional bright field detection. Also, higher resolution optics shows lower color noise than lower resolution optics. Experimental results are presented that illustrate the optical bandwidth enhancements identified through these simulations.

Paper Details

Date Published: 7 July 1997
PDF: 9 pages
Proc. SPIE 3050, Metrology, Inspection, and Process Control for Microlithography XI, (7 July 1997); doi: 10.1117/12.275923
Show Author Affiliations
Aaron L. Swecker, Carnegie Mellon Univ. (United States)
Andrzej J. Strojwas, Carnegie Mellon Univ. (United States)
Ady Levy, KLA Instruments Corp. (United States)
Bobby R. Bell, KLA Instruments Corp. (United States)


Published in SPIE Proceedings Vol. 3050:
Metrology, Inspection, and Process Control for Microlithography XI
Susan K. Jones, Editor(s)

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