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Proceedings Paper

Scatterometric process monitor for silylation
Author(s): Shoaib H. Zaidi; John Robert McNeil; S. Sohail H. Naqvi
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Paper Abstract

The silylation step in the top surface imaging process has been difficult to monitor and characterize for lack of appropriate metrology tools. Utilizing scatterometry to measure silylated wafers, we report successful monitoring of processing effects. Wafers were manufactured under nominally identical processing conditions. Applying scatterometry, we are able to discern location dependent variations within wafers. In addition, wafer to wafer variations are also observe. Both these variations are detrimental to yield. Variations in processing conditions cause modifications and perturbations in the gratings. Different gratings diffract light in a dissimilar manner. Processing conditions and their effects on the wafers are deduced from these measurements using computational analysis. This information is used to detect unwanted variations in processing conditions so that corrective responses can be implemented. This technique is rapid, non-destructive and sensitive to changes introduced by the silylation process.

Paper Details

Date Published: 7 July 1997
PDF: 12 pages
Proc. SPIE 3050, Metrology, Inspection, and Process Control for Microlithography XI, (7 July 1997); doi: 10.1117/12.275915
Show Author Affiliations
Shoaib H. Zaidi, Ghulam Ishaq Khan Institute of Engineering Sciences and Technology (Pakistan)and Univ. of New Mexico (United States)
John Robert McNeil, Univ. of New Mexico (United States)
S. Sohail H. Naqvi, Ghulam Ishaq Khan Institute of Engineering Sciences and Technology (Pakistan)


Published in SPIE Proceedings Vol. 3050:
Metrology, Inspection, and Process Control for Microlithography XI
Susan K. Jones, Editor(s)

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