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Proceedings Paper

Simulating photomask edge roughness and corner rounding
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Paper Abstract

Corner rounding and edge roughness of a rectangular opening at a glass-chrome mask are simulated with TEMPEST. The intensity patterns on the image plane are extracted and compared for these defects at several degrees of fabrication-induced imperfection. A 4X - DUV lithography printing system is assumed with NA equals 0.6 and (sigma) equals 0.5. The prototypical geometry simulate was a 4 micrometers X 1 micrometers line on the mask. The results indicate that the rounding of the corners does not decrease the printed area by more than 2 percent for a 0.4 micrometers radius corner rounding and that roughness should not be a concern, at least in DUV, since it does not crucially affect the linewidth of the printed area.

Paper Details

Date Published: 7 July 1997
PDF: 9 pages
Proc. SPIE 3050, Metrology, Inspection, and Process Control for Microlithography XI, (7 July 1997); doi: 10.1117/12.275911
Show Author Affiliations
Konstantinos Adam, Univ. of California/Berkeley (United States)
Robert John Socha, Univ. of California/Berkeley (United States)
Thomas V. Pistor, Univ. of California/Berkeley (United States)
Andrew R. Neureuther, Univ. of California/Berkeley (United States)

Published in SPIE Proceedings Vol. 3050:
Metrology, Inspection, and Process Control for Microlithography XI
Susan K. Jones, Editor(s)

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