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Proceedings Paper

Application of statistical metrology to reduce total uncertainty in the CD SEM measurement of across-chip linewidth variation
Author(s): Kevin M. Monahan; Randy A. Forcier; Waiman Ng; Suresh Kudallur; Harry Sewell; Herschel M. Marchman; Jerry E. Schlesinger
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Paper Abstract

Statistical metrology can be defined as a set of procedures to remove systematic and random gauge error from confounded measurement data for the purpose of reducing total uncertainty. We have applied these procedures to the determination of across-chip linewidth variation, a critical statistic in determining the speed binning and average selling price of advanced microprocessors, digital signal processors, and high-performance memory devices. The measurement data was obtained from tow sources: a high- throughput CD-SEM and an atomic force microscope. We found that the high-throughput of SEM permitted the additional measurements required for statistical metrology and heterogeneous gauge matching.

Paper Details

Date Published: 7 July 1997
PDF: 14 pages
Proc. SPIE 3050, Metrology, Inspection, and Process Control for Microlithography XI, (7 July 1997); doi: 10.1117/12.275907
Show Author Affiliations
Kevin M. Monahan, KLA Instruments Corp. (United States)
Randy A. Forcier, KLA Instruments Corp. (United States)
Waiman Ng, KLA Instruments Corp. (United States)
Suresh Kudallur, Silicon Valley Group Lithography Systems, Inc. (United States)
Harry Sewell, Silicon Valley Group Lithography Systems, Inc. (United States)
Herschel M. Marchman, Texas Instruments Inc. (United States)
Jerry E. Schlesinger, Texas Instruments Inc. (United States)

Published in SPIE Proceedings Vol. 3050:
Metrology, Inspection, and Process Control for Microlithography XI
Susan K. Jones, Editor(s)

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