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Proceedings Paper

Wafer-cleaning process after plasma metal etch
Author(s): Didier Louis; Wai-Mun Lee; Douglas Holmes
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Paper Abstract

The developments associated with a new plasma etching technique for sub micron process using DUV resist has placed a new requirement on wafer cleaning technology. Not only does it require a chemical solution to remove the etching residue, it is desirable to reduce residual chlorine. In our study, a metal stack, including TiN ARC 400 angstroms/AlCu 6500 angstrom/ barrier TiN 600 angstrom, is patterned with DUV resist and etched in a single wafer etcher. The chlorine level on the wafer surface is determined using WDXRF analysis. We have made morphological observations of the wafer cleanliness using field emission scanning electron microscopy.

Paper Details

Date Published: 7 July 1997
PDF: 14 pages
Proc. SPIE 3049, Advances in Resist Technology and Processing XIV, (7 July 1997); doi: 10.1117/12.275904
Show Author Affiliations
Didier Louis, LETI/CEA (France)
Wai-Mun Lee, EKC Technology, Inc. (United Kingdom)
Douglas Holmes, EKC Technology, Inc. (United Kingdom)


Published in SPIE Proceedings Vol. 3049:
Advances in Resist Technology and Processing XIV
Regine G. Tarascon-Auriol, Editor(s)

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