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Proceedings Paper

Effects of DUV resist sensitivities on lithographic process window
Author(s): Kevin G. Kemp; Daniel J. Williams; Joseph W. Cayton; Peter Steege; Steve D. Slonaker; Richard C. Elliott
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Paper Abstract

DUV lithography is rapidly becoming the technology of choice for the manufacture of semiconductor devices with minimum geometry features below 0.35 micrometer. Beyond traditional exposure performance metrics such as depth of focus and exposure energy latitude, the enhanced sensitivities of chemically amplified resists to process parameters including airborne amine concentration, post exposure delay time, and post exposure bake temperature significantly affect the available process window. A critical dimension error budget model is used to compare experimentally determined wafer-to- wafer, within-wafer and intrafield linewidth variation against predicted values based on measured process sensitivities and tool performance parameters. The relative error contributions due to each source of linewidth variation and each technology component of the lithography process are discussed. Post exposure bake temperature is identified as a significant contributor to the measured within-wafer linewidth variation of 10.4 nm at 3 sigma when using APEX-E photoresist. Photomask linewidth non-uniformity is identified as a significant contributor to the measured intrafield variation of 15.8 nm at 3 sigma.

Paper Details

Date Published: 7 July 1997
PDF: 8 pages
Proc. SPIE 3049, Advances in Resist Technology and Processing XIV, (7 July 1997); doi: 10.1117/12.275895
Show Author Affiliations
Kevin G. Kemp, FSI International (United States)
Daniel J. Williams, FSI International (United States)
Joseph W. Cayton, FSI International (United States)
Peter Steege, FSI International (United States)
Steve D. Slonaker, ASM Lithography BV (United States)
Richard C. Elliott, KLA Instruments (United States)

Published in SPIE Proceedings Vol. 3049:
Advances in Resist Technology and Processing XIV
Regine G. Tarascon-Auriol, Editor(s)

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