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Proceedings Paper

Tunable AR for DUV lithography
Author(s): Edward K. Pavelchek; Manuel doCanto
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Paper Abstract

A thermally cross-linking bottom anti-reflectant, AR2, is evaluated. The material can be made in a range of absorptivities. An optimum optical density of about 9/(mu) ( 248 nm) which lowers photoresist swing curves to less than 2%, was chosen from optical modeling and etch rate measurements. The material offers spin bowl compatibility with common spin- coating solvents, and etch rates and conformality improvements over commercially available materials. Good profiles were obtained for several photoresists, and wider process windows than on planar silicon.

Paper Details

Date Published: 7 July 1997
PDF: 12 pages
Proc. SPIE 3049, Advances in Resist Technology and Processing XIV, (7 July 1997); doi: 10.1117/12.275893
Show Author Affiliations
Edward K. Pavelchek, Shipley Co. (United States)
Manuel doCanto, Shipley Co. (United States)


Published in SPIE Proceedings Vol. 3049:
Advances in Resist Technology and Processing XIV
Regine G. Tarascon-Auriol, Editor(s)

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