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Proceedings Paper

Determination of resist and development parameters for i-line photoresist AZ 7800 by experiment and simulation
Author(s): Lothar Bauch; Ulrich A. Jagdhold; Walter Spiess
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Paper Abstract

We present a method to improve the simulation accuracy by adjustment of the resist and process parameters. The parameters are fitted by comparison of simulated and experimental determined lithographic functions: swing curves, development rate function and focus latitude curves for different doses within an accuracy of plus or minus 30 nm. Therefore we can use the simulation to support the process optimization.

Paper Details

Date Published: 7 July 1997
PDF: 10 pages
Proc. SPIE 3049, Advances in Resist Technology and Processing XIV, (7 July 1997); doi: 10.1117/12.275892
Show Author Affiliations
Lothar Bauch, Institut fuer Halbleiterphysik (Germany)
Ulrich A. Jagdhold, Institut fuer Halbleiterphysik (Germany)
Walter Spiess, Hoechst AG (Germany)

Published in SPIE Proceedings Vol. 3049:
Advances in Resist Technology and Processing XIV
Regine G. Tarascon-Auriol, Editor(s)

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