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Proceedings Paper

Refractive indices in thick photoresist films as a function of bake conditions and film exposure
Author(s): Stanley A. Ficner; Ralph R. Dammel; Yvette M. Perez; Allen B. Gardiner; C. Grant Willson
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Paper Abstract

Prism coupling is applied to thick film DNQ/novolak photoresist materials in the 4.6 to 24 micrometer range. Refractive indices are obtained as a function of softbake temperature and softbake time for exposed and unexposed resists. The results for AZR P4330 RS and AZR EXP 9244 photoresists are compared at a film thickness of 4.6 micrometer. Each photoresist shows an increase in refractive index at 633 nm with softbake temperature and softbake time and a decrease in refractive index with an increase in exposure. The refractive index changes of the films are correlated to the solvent content as determined by radioactive labeling and by gas chromatography. In thicker films, solvent gradients profiles could be obtained by the application of an inverse WKB approximation to the effective indices. The lithographic performance of AZREXP 9244, a new generation thick film photoresist, is examined at various softbake temperatures and softbake times and interpreted in terms solvent content as obtained from the refractive index.

Paper Details

Date Published: 7 July 1997
PDF: 12 pages
Proc. SPIE 3049, Advances in Resist Technology and Processing XIV, (7 July 1997); doi: 10.1117/12.275885
Show Author Affiliations
Stanley A. Ficner, Hoechst Celanese Corp. (United States)
Ralph R. Dammel, Hoechst Celanese Corp. (United States)
Yvette M. Perez, Hoechst Celanese Corp. (United States)
Allen B. Gardiner, Univ. of Texas/Austin (United States)
C. Grant Willson, Univ. of Texas/Austin (United States)

Published in SPIE Proceedings Vol. 3049:
Advances in Resist Technology and Processing XIV
Regine G. Tarascon-Auriol, Editor(s)

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