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Proceedings Paper

Novel polymeric dyes for bottom antireflective coatings
Author(s): Shuji Ding; Ping-Hung Lu; Ralph R. Dammel; Jianhui Shan; Salem Mehtsun; T. T. Hannigan; D. E. Eberly; Dinesh N. Khanna; Hatsuyuki Tanaka
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Paper Abstract

In lithographic processing, implementation of a bottom antireflective coating can reduce or eliminate reflective notching and swing effects, thereby improving linewidth (CD) control. We have recently synthesized a series of novel polymeric dyes and evaluated them as bottom antireflective coatings for i-line lithographic applications. This work has led to the development of the BARLiTM II commercial bottom coat material. The BARLiTM II films show high absorbance at 365 nm and excellent coating uniformity. They are tailor- made to yield the optimum values for refractive indices (n and k) for i-line which ensures minimum reflectivity and maximum swing reduction for photoresist layers. BARLiTM II materials are formulated in photoresist compatible solvents to simplify the EBR process and to be environmentally and user friendly. Data presented in this paper also include BARLiTM II thermal stability, resist intermixing test, etch selectivity, swing reduction, lithographic performance, and step coverage profiles.

Paper Details

Date Published: 7 July 1997
PDF: 10 pages
Proc. SPIE 3049, Advances in Resist Technology and Processing XIV, (7 July 1997); doi: 10.1117/12.275879
Show Author Affiliations
Shuji Ding, Hoechst Celanese Corp. (United States)
Ping-Hung Lu, Hoechst Celanese Corp. (United States)
Ralph R. Dammel, Hoechst Celanese Corp. (United States)
Jianhui Shan, Hoechst Celanese Corp. (United States)
Salem Mehtsun, Hoechst Celanese Corp. (United States)
T. T. Hannigan, Hoechst Celanese Corp. (United States)
D. E. Eberly, Hoechst Celanese Corp. (United States)
Dinesh N. Khanna, Hoechst Celanese Corp. (United States)
Hatsuyuki Tanaka, Hoechst Japan Ltd. (Japan)

Published in SPIE Proceedings Vol. 3049:
Advances in Resist Technology and Processing XIV
Regine G. Tarascon-Auriol, Editor(s)

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