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Proceedings Paper

Novel single-layer chemically amplified resist for 193-nm lithography
Author(s): Sang-Jun Choi; Yool Kang; Dong-Won Jung; Chun-Geun Park; Joo-Tae Moon
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Paper Abstract

A new class of photoresist matrix polymer based on alicyclic cyclopolymer was developed for use in ArF single-layer lithography. A novel polymer was synthesized by terpolymerization reaction between tert-butyl methacrylate and alicyclic-maleic anhydride alternating copolymer, which has a hydroxy substituent on the alicyclic group. The polymer showed good solubility in a 2.38 wt% TMAH aqueous solution, high thermal stability up to 180 degrees Celsius, and a good dry- etch resistance against CF4 gas (1.14 times the etching rate of novolak resist). Using an ArF excimer laser exposure system, 0.14 micrometer line and space patterns have been resolved.

Paper Details

Date Published: 7 July 1997
PDF: 9 pages
Proc. SPIE 3049, Advances in Resist Technology and Processing XIV, (7 July 1997); doi: 10.1117/12.275878
Show Author Affiliations
Sang-Jun Choi, Samsung Electronics Co., Ltd. (South Korea)
Yool Kang, Samsung Electronics Co., Ltd. (South Korea)
Dong-Won Jung, Samsung Electronics Co., Ltd. (South Korea)
Chun-Geun Park, Samsung Electronics Co., Ltd. (South Korea)
Joo-Tae Moon, Samsung Electronics Co., Ltd. (South Korea)


Published in SPIE Proceedings Vol. 3049:
Advances in Resist Technology and Processing XIV
Regine G. Tarascon-Auriol, Editor(s)

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