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Proceedings Paper

60-nm copper lines produced by a lift-off technique with 5-keV electrons: experiment and simulation
Author(s): Ulrich A. Jagdhold; Lothar Bauch; Monika Boettcher
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Paper Abstract

We present a lift-off technique based on a single layer resist system which produces sub-100 nm structures of a metallization layer using a low-voltage electron beam lithography. By using an accelerating voltage of 5 keV an undercut of the resist profile after electron beam lithography is used to interrupt the anisotropically deposited copper layer so that a lift-off process produces structures for metallization layers. The two dimensional simulation of the whole process is based on a Monte-Carlo electron scattering calculation to describe the electron exposure, a cell-removal-algorithm to obtain the resist profiles after wet development and a string-algorithm to simulate the copper deposition. By optimizing this process, where the simulation assists the experiment, structures down to 60 nm are fabricated.

Paper Details

Date Published: 7 July 1997
PDF: 8 pages
Proc. SPIE 3049, Advances in Resist Technology and Processing XIV, (7 July 1997); doi: 10.1117/12.275877
Show Author Affiliations
Ulrich A. Jagdhold, Institut fuer Halbleiterphysik (Germany)
Lothar Bauch, Institut fuer Halbleiterphysik (Germany)
Monika Boettcher, Institut fuer Halbleiterphysik (Germany)


Published in SPIE Proceedings Vol. 3049:
Advances in Resist Technology and Processing XIV
Regine G. Tarascon-Auriol, Editor(s)

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