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Proceedings Paper

Sub-150-nm electron-beam lithography using AZPN114 chemically amplified resist
Author(s): Zheng Cui; R. A. Moody; Ian M. Loader; John G. Watson; Philip D. Prewett
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Paper Abstract

Chemically amplified resist AZPN114 from Hoechst has been extensively investigated for electron beam lithography at 150 nm resolution and below, using commercial e-beam lithography systems. Experimental design method was used to study the combined effect of pre and post exposure bake conditions on the performance of AZPN114 at 150 nm nominal linewidth. The effects of scanning field size of an e-beam system, the exposure energy, the resist thickness an pattern density, development conditions and post exposure delay have been investigated on resist sensitivity and resolution capability. One hundred nm resist lines with 7:1 aspect ratio and 50 nm resolution have been achieved using AZPN114 with optimized exposure and process conditions.

Paper Details

Date Published: 7 July 1997
PDF: 9 pages
Proc. SPIE 3049, Advances in Resist Technology and Processing XIV, (7 July 1997); doi: 10.1117/12.275869
Show Author Affiliations
Zheng Cui, Rutherford Appleton Lab. (United Kingdom)
R. A. Moody, Rutherford Appleton Lab. (United Kingdom)
Ian M. Loader, Rutherford Appleton Lab. (United Kingdom)
John G. Watson, Rutherford Appleton Lab. (United Kingdom)
Philip D. Prewett, Rutherford Appleton Lab. (United Kingdom)

Published in SPIE Proceedings Vol. 3049:
Advances in Resist Technology and Processing XIV
Regine G. Tarascon-Auriol, Editor(s)

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