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Proceedings Paper

Bleaching-induced changes in the dispersion curves of DNQ photoresists
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Paper Abstract

Three sets of data are required to model a non-chemically amplified photoresist: the exposure or ABC (Dill) parameters, the development parameters, and the refractive index. The refractive index of photoresists has often been considered constant in simulations and other work. However, the refractive index can change as the chemical composition of the photoresist is modified during the exposure reaction. This work presents a study of the refractive index as a function of exposure for a series of commercial, nonchemically amplified DNQ/novolak photoresists using spectroscopic ellipsometry. It was found that the real part of the refractive index for a photoresist changes by as much as 5% at the wavelength of exposure, in part due to the resist bleaching which removes the anomalous dispersion contributions to the refractive index. A discussion of the impact of such refractive index changes on Dill parameter extraction and the simulation of standing wave patterns are presented.

Paper Details

Date Published: 7 July 1997
PDF: 11 pages
Proc. SPIE 3049, Advances in Resist Technology and Processing XIV, (7 July 1997); doi: 10.1117/12.275861
Show Author Affiliations
Clifford L. Henderson, Univ. of Texas/Austin (United States)
C. Grant Willson, Univ. of Texas/Austin (United States)
Ralph R. Dammel, Hoechst Celanese Corp. (United States)
Ron A. Synowicki, J.A. Woollam Co., Inc. (United States)


Published in SPIE Proceedings Vol. 3049:
Advances in Resist Technology and Processing XIV
Regine G. Tarascon-Auriol, Editor(s)

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