Share Email Print

Proceedings Paper

Laser-specific photochemistry and lithography of DNQ-4-sulfonic-acid-ester-based photoresists
Author(s): Juergen Bendig; Siegrun Helm; A. Uhl; Lothar Bauch
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

The photolysis of DNQ-4-sulfonic acid esters yields 3- indenecarboxylic acid-1-sulfonic ester (3-ICA-1-SE). 3-ICA-1- SE reacts to the corresponding sulfonic acid. The rate of the ester cleavage is fast at exposure and slow in the dark. The deep UV lamp or laser exposure using low intensity is most effective for acid generation, pH change and network formation (image reversal).

Paper Details

Date Published: 7 July 1997
PDF: 7 pages
Proc. SPIE 3049, Advances in Resist Technology and Processing XIV, (7 July 1997); doi: 10.1117/12.275853
Show Author Affiliations
Juergen Bendig, Humboldt Univ. zu Berlin (Germany)
Siegrun Helm, Humboldt Univ. zu Berlin (Germany)
A. Uhl, Humboldt Univ. zu Berlin (FRG) and Institut fuer Halbleiterphysik (Germany)
Lothar Bauch, Institut fuer Halbleiterphysik (Germany)

Published in SPIE Proceedings Vol. 3049:
Advances in Resist Technology and Processing XIV
Regine G. Tarascon-Auriol, Editor(s)

© SPIE. Terms of Use
Back to Top