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Proceedings Paper

Acid amplification of chemically amplified resists for 193-nm lithography
Author(s): Takeshi Ohfuji; Makoto Takahashi; Koichi Kuhara; Tohru Ogawa; Hiroshi Ohtsuka; Masaru Sasago; Kunihiro Ichimura
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Paper Abstract

We analyzed acid amplified positive resists designed for 193 nm lithography. The acid amplified resists are composed of an acid generator, a partially protected alicyclic polymer and an acid amplifier which is designed to produce acid during post- exposure baking. We found that acid amplified resists double the sensitivity. We also found that introducing acid amplified resists improves surface effect and adhesion. The acid amplified resist resolve 0.16 micrometer L&S, whereas conventional chemically amplified resists only resolve 0.2 micrometer L&S.

Paper Details

Date Published: 7 July 1997
PDF: 7 pages
Proc. SPIE 3049, Advances in Resist Technology and Processing XIV, (7 July 1997); doi: 10.1117/12.275847
Show Author Affiliations
Takeshi Ohfuji, Association of Super-Advanced Electronics Technologies (Japan)
Makoto Takahashi, Association of Super-Advanced Electronics Technologies (Japan)
Koichi Kuhara, Association of Super-Advanced Electronics Technologies (Japan)
Tohru Ogawa, Association of Super-Advanced Electronics Technologies (Japan)
Hiroshi Ohtsuka, Association of Super-Advanced Electronics Technologies (Japan)
Masaru Sasago, Association of Super-Advanced Electronics Technologies (Japan)
Kunihiro Ichimura, Tokyo Institute of Technology (Japan)


Published in SPIE Proceedings Vol. 3049:
Advances in Resist Technology and Processing XIV
Regine G. Tarascon-Auriol, Editor(s)

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