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Proceedings Paper

PHS with inert blocking groups for DUV negative resist
Author(s): William R. Brunsvold; Will Conley; Pushkara Rao Varanasi; Mahmoud Khojasteh; Niranjan M. Patel; Antoinette F. Molless; Mark O. Neisser; Gregory Breyta
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Paper Abstract

The synthesis, characterization, and lithographic evaluation of a polyhydroxystyrene (PHS) modified with isopropyloxycarbonate groups is described. The inert blocking group is attached to the hydroxyl sites on PHS resin to slow the dissolution rate and make the resin useful in resists designed for 0.263 N TMAH developers. A negative tone resist (CGR-IP) that is formulated with the modified polymer is compatible with the industry standard 0.263 N TMAH developer and is capable of resolving 0.22 micrometer L/S features and 0.14 micrometer isolated lines on a 0.50 NA imaging system. Reaction with PHS resin occurs primarily at the phenolic sites as shown by carbon-13 NMR and 10% protection is sufficient to lower the dissolution rate to an acceptable level so that there is less than 50 angstrom film loss in exposed areas. The blocking group described here is not acid labile and reaming intact after the resist film is baked at 150 degrees Celsius.

Paper Details

Date Published: 7 July 1997
PDF: 13 pages
Proc. SPIE 3049, Advances in Resist Technology and Processing XIV, (7 July 1997); doi: 10.1117/12.275839
Show Author Affiliations
William R. Brunsvold, IBM Microelectronics Div. (United States)
Will Conley, IBM Microelectronics Div. (United States)
Pushkara Rao Varanasi, IBM Microelectronics Div. (United States)
Mahmoud Khojasteh, IBM Microelectronics Div. (United States)
Niranjan M. Patel, IBM Microelectronics Div. (United States)
Antoinette F. Molless, IBM Microelectronics Div. (United States)
Mark O. Neisser, IBM Microelectronics Div. (United States)
Gregory Breyta, IBM Almaden Research Ctr. (United States)


Published in SPIE Proceedings Vol. 3049:
Advances in Resist Technology and Processing XIV
Regine G. Tarascon-Auriol, Editor(s)

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