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Proceedings Paper

Practical resists for 193-nm lithography using 2.38% TMAH: physicochemical influences on resist performance
Author(s): Charles R. Szmanda; Jaclyn J. Yu; George G. Barclay; James F. Cameron; Robert J. Kavanagh; Robert F. Blacksmith; Peter Trefonas; Gary N. Taylor
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Paper Abstract

This paper describes some of the basic physicochemical considerations necessary to design a resist for use in 193 nm lithography. Of fundamental importance are the photoreaction which generates the photoacid, the reactivity of the photoacid the dissolution of the resist in the developer, and the adhesion of the images to the substrate. These phenomena are discussed and we show results that demonstrate progress in these areas. In addition, we show preliminary etch resistance of our polymer system and selected lithographic results.

Paper Details

Date Published: 7 July 1997
PDF: 11 pages
Proc. SPIE 3049, Advances in Resist Technology and Processing XIV, (7 July 1997); doi: 10.1117/12.275836
Show Author Affiliations
Charles R. Szmanda, Shipley Co. (United States)
Jaclyn J. Yu, Shipley Co. (United States)
George G. Barclay, Shipley Co. (United States)
James F. Cameron, Shipley Co. (United States)
Robert J. Kavanagh, Shipley Co. (United States)
Robert F. Blacksmith, Shipley Co. (United States)
Peter Trefonas, Shipley Co. (United States)
Gary N. Taylor, Shipley Co. (United States)


Published in SPIE Proceedings Vol. 3049:
Advances in Resist Technology and Processing XIV
Regine G. Tarascon-Auriol, Editor(s)

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