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Proceedings Paper

DUV resist strategy for applications of next-generation devices
Author(s): Yoshiaki Arai; Kazufumi Sato
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Paper Abstract

Deep UV technology has improved significantly over the last few years, however the design requirements have also become more challenging. To achieve the design rules being considered at the leading edge of semiconductor manufacturing, we propose that different resist formulations be used for different layers.

Paper Details

Date Published: 7 July 1997
PDF: 14 pages
Proc. SPIE 3049, Advances in Resist Technology and Processing XIV, (7 July 1997); doi: 10.1117/12.275831
Show Author Affiliations
Yoshiaki Arai, Ohka America, Inc. (Japan)
Kazufumi Sato, Tokyo Ohka Kogyo Co., Ltd. (Japan)


Published in SPIE Proceedings Vol. 3049:
Advances in Resist Technology and Processing XIV
Regine G. Tarascon-Auriol, Editor(s)

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