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Proceedings Paper

New ESCAP-type resist with enhanced etch resistance and its application to future DRAM and logic devices
Author(s): Will Conley; William R. Brunsvold; Fred Buehrer; Ronald DellaGuardia; David Dobuzinsky; Timothy R. Farrell; Hok Ho; Ahmad D. Katnani; Robin Keller; James T. Marsh; Paul Muller; Ronald Nunes; Hung Y. Ng; James M. Oberschmidt; Michael Pike; Deborah Ryan; Tina Cotler-Wagner; Ron Schulz; Hiroshi Ito; Donald C. Hofer; Gregory Breyta; Debra Fenzel-Alexander; Gregory M. Wallraff; Juliann Opitz; James W. Thackeray; George G. Barclay; James F. Cameron; Tracy K. Lindsay; Michael Francis Cronin; Matthew L. Moynihan; Sassan Nour; Jacque H. Georger; Mike Mori; Peter Hagerty; Roger F. Sinta; Thomas M. Zydowsky
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Paper Abstract

This new photoresist system extends the capability of the ESCAP platform previously discussed. (1) This resist material features a modified ESCAP type 4-hydroxystyrene-t-butyl acrylate polymer system which is capable of annealing due to the increased stability of the t-butyl ester blocking group. The resist based on this polymer system exhibits excellent delay stability and enhanced etch resistance versus previous DUV resists, APEX and UV2HS. Improved stabilization of chemically amplified photoresist images can be achieved through reduction of film volume by film densification. When the host polymer provides good thermal stability the soft bake conditions can be above or near the Tg (glass transition) temperature of the polymer. The concept of annealing (film densification) can significantly improve the environmental stability of the photoresist system. Improvements in the photoacid generator, processing conditions and overall formulation coupled with high NA (numerical aperture) exposure systems, affords linear lithography down to 0.15 micrometer for isolated lines with excellent post exposure delay stability. In this paper, we discuss the UV4 and UV5 photoresist systems based on the ESCAP materials platform. The resist based on this polymer system exhibits excellent delay stability and enhanced etch resistance versus APEX-E and UV2HS. Due to lower acrylate content, the Rmax for this system can be tuned for feature-type optimization. We demonstrate sub-0.25 micrometer process window for isolated lines using these resists on a conventional exposure tool with chrome on glass masks. We also discuss current use for various device levels including gate structures for advanced microprocessor designs. Additional data will be provided on advanced DRAM applications for 0.25 micrometer and sub-0.25 micrometer programs.

Paper Details

Date Published: 7 July 1997
PDF: 18 pages
Proc. SPIE 3049, Advances in Resist Technology and Processing XIV, (7 July 1997); doi: 10.1117/12.275830
Show Author Affiliations
Will Conley, IBM Microelectronics Div. (United States)
William R. Brunsvold, IBM Microelectronics Div. (United States)
Fred Buehrer, IBM Microelectronics Div. (United States)
Ronald DellaGuardia, IBM Microelectronics Div. (United States)
David Dobuzinsky, IBM Microelectronics Div. (United States)
Timothy R. Farrell, IBM Microelectronics Div. (United States)
Hok Ho, IBM Microelectronics Div. (United States)
Ahmad D. Katnani, IBM Microelectronics Div. (United States)
Robin Keller, IBM Microelectronics Div. (United States)
James T. Marsh, IBM Microelectronics Div. (United States)
Paul Muller, IBM Microelectronics Div. (United States)
Ronald Nunes, IBM Microelectronics Div. (United States)
Hung Y. Ng, IBM Microelectronics Div. (United States)
James M. Oberschmidt, IBM Microelectronics Div. (United States)
Michael Pike, IBM Microelectronics Div. (United States)
Deborah Ryan, IBM Microelectronics Div. (United States)
Tina Cotler-Wagner, IBM Microelectronics Div. (United States)
Ron Schulz, IBM Microelectronics Div. (United States)
Hiroshi Ito, IBM Almaden Research Ctr. (United States)
Donald C. Hofer, IBM Almaden Research Ctr. (United States)
Gregory Breyta, IBM Almaden Research Ctr. (United States)
Debra Fenzel-Alexander, IBM Almaden Research Ctr. (United States)
Gregory M. Wallraff, IBM Almaden Research Ctr. (United States)
Juliann Opitz, IBM Almaden Research Ctr. (United States)
James W. Thackeray, Shipley Co. (United States)
George G. Barclay, Shipley Co. (United States)
James F. Cameron, Shipley Co. (United States)
Tracy K. Lindsay, Shipley Co. (United States)
Michael Francis Cronin, Shipley Co. (United States)
Matthew L. Moynihan, Shipley Co. (United States)
Sassan Nour, Shipley Co. (United States)
Jacque H. Georger, Shipley Co. (United States)
Mike Mori, Shipley Co. (United States)
Peter Hagerty, Shipley Co. (United States)
Roger F. Sinta, Shipley Co. (United States)
Thomas M. Zydowsky, Shipley Co. (United States)


Published in SPIE Proceedings Vol. 3049:
Advances in Resist Technology and Processing XIV
Regine G. Tarascon-Auriol, Editor(s)

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