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Proceedings Paper

Photoresist characterization for lithography simulation: IV. Processing effects on resist parameters
Author(s): Clifford L. Henderson; Pavlos C. Tsiartas; Lewis W. Flanagin; Sanju Pancholi; Sajed A. Chowdhury; Katherine D. Dombrowski; Ammar N. Chinwalla; C. Grant Willson
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Paper Abstract

In the past, resist parameters (exposure and development parameters) were typically only available for a single set of processing conditions. Therefore, it has been impossible to explore the effect of processing conditions on resist performance using simulation. In this work, a statistical experimental design and response surface analysis technique was used in conjunction with our improved parameter extraction techniques to investigate the effect of processing conditions on the exposure and development parameters for a commercial i- line resist. The effect of soft bake time and temperature on the exposure parameters and the effect of soft bake temperature, soft bake time, post-exposure bake temperature, and post-exposure bake time on development parameters is discussed. Using this information, it is possible for the first time to consider optimizing resist processing conditions using lithographic simulations.

Paper Details

Date Published: 7 July 1997
PDF: 12 pages
Proc. SPIE 3049, Advances in Resist Technology and Processing XIV, (7 July 1997); doi: 10.1117/12.275820
Show Author Affiliations
Clifford L. Henderson, Univ. of Texas/Austin (United States)
Pavlos C. Tsiartas, Univ. of Texas/Austin (United States)
Lewis W. Flanagin, Univ. of Texas/Austin (United States)
Sanju Pancholi, Univ. of Texas/Austin (United States)
Sajed A. Chowdhury, Univ. of Texas/Austin (United States)
Katherine D. Dombrowski, Univ. of Texas/Austin (United States)
Ammar N. Chinwalla, Univ. of Texas/Austin (United States)
C. Grant Willson, Univ. of Texas/Austin (United States)


Published in SPIE Proceedings Vol. 3049:
Advances in Resist Technology and Processing XIV
Regine G. Tarascon-Auriol, Editor(s)

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