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Proceedings Paper

Photoresist development modeling based on continuity equations
Author(s): Yueqi Zhu; Luigi Capodieci; Franco Cerrina
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Paper Abstract

In this paper, we propose a model to simulate photoresist development based on continuity equations. In the resist dissolution process, to consider different components (developer, resist, reaction by-product, etc.), each component's local concentration is described by the continuity equation. The resist development process is viewed as the diffusion-reaction process of all components involved in the dissolution process. A simulation program has been written based on the above concept. The simulation for different previous existing models are discussed.

Paper Details

Date Published: 7 July 1997
PDF: 11 pages
Proc. SPIE 3049, Advances in Resist Technology and Processing XIV, (7 July 1997); doi: 10.1117/12.275819
Show Author Affiliations
Yueqi Zhu, Univ. of Wisconsin/Madison (United States)
Luigi Capodieci, Univ. of Wisconsin/Madison (United States)
Franco Cerrina, Univ. of Wisconsin/Madison (United States)


Published in SPIE Proceedings Vol. 3049:
Advances in Resist Technology and Processing XIV
Regine G. Tarascon-Auriol, Editor(s)

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