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Proceedings Paper

Enhancing the development-rate model for optimum simulation capability in the subhalf-micron regime
Author(s): Graham G. Arthur; Brian Martin; Chris A. Mack
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Paper Abstract

Methods used in the extraction of lithographic modeling parameters for simulation packages such as PROLITH/2 are examined. The results reveal hitherto unconsidered aspects of the development process which, when implemented in the simulations, give improved agreement with practical results with regard to characteristics such as resolution, depth-of- focus, linearity and dense/isolated bias. These refinements, which are particularly influential in the sub-half-micron regime, include the variation in photoresist dissolution properties as a function of depth into the resist film and also a small but powerful development 'notch' which is observed in the development rate versus PAC concentration curve as it approaches the minimum dissolution rate. This work therefore shows that current development models may not be adequate for some applications, and that great care must be taken in deriving and using the correct set of parameters for any one situation.

Paper Details

Date Published: 7 July 1997
PDF: 12 pages
Proc. SPIE 3049, Advances in Resist Technology and Processing XIV, (7 July 1997); doi: 10.1117/12.275818
Show Author Affiliations
Graham G. Arthur, Rutherford Appleton Lab. (United Kingdom)
Brian Martin, GEC Plessey Semiconductors Ltd. (United Kingdom)
Chris A. Mack, FINLE Technologies Inc. (United States)


Published in SPIE Proceedings Vol. 3049:
Advances in Resist Technology and Processing XIV
Regine G. Tarascon-Auriol, Editor(s)

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