Share Email Print
cover

Proceedings Paper

Time-dependent simulation of acid and product distributions in chemically amplified resist
Author(s): Kazuya Kamon; Keisuke Nakazawa; Atsuko Yamaguchi; Nobuyuki N. Matsuzawa; Takeshi Ohfuji; Seiichi Tagawa
Format Member Price Non-Member Price
PDF $17.00 $21.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

In KrF or ArF resist processing, a chemically amplified resist is widely used for ULSI device fabrication. Due to the catalytic reaction of generated acid, decomposition of a positive resist or cross linking of a negative resist is amplified during post-exposure baking. In order to take into account these characteristics during resist simulation, a resist simulator based upon the percolation theory is developed, and the acid and product distributions during post exposure baking are iteratively calculated. Thus, we can conclude that the acid and product distribution in resist film are time dependent. Moreover it is necessary to develop using percolation theory a resist simulator that can take into account macroscopic feature changes from microscopic molecular structural change. The dissolution rate curve and distribution of acid diffusion length are derived with percolation theory. Then the distribution of the product that corresponds to decomposition in a positive resist is calculated. When we increase the acid thermal diffusion enough to reduce the standing wave effect while keeping it small enough not to reach neighboring patterns, the contour lines of product distribution from the thermal catalyst reaction move vertically rather than horizontally. (This is not a molecule movement.) By using these features, the resist rectangularity is improved and the DOF is chemically enlarged.

Paper Details

Date Published: 7 July 1997
PDF: 9 pages
Proc. SPIE 3049, Advances in Resist Technology and Processing XIV, (7 July 1997); doi: 10.1117/12.275817
Show Author Affiliations
Kazuya Kamon, Association of Super-Advanced Electronics Technologies and Mitsubishi Electric Corp. (Japan)
Keisuke Nakazawa, Association of Super-Advanced Electronics Technologies and Toshiba Corp. (Japan)
Atsuko Yamaguchi, Association of Super-Advanced Electronics Technologies and Hitachi, Ltd. (Japan)
Nobuyuki N. Matsuzawa, Association of Super-Advanced Electronics Technologies and Sony Corp. (Japan)
Takeshi Ohfuji, Association of Super-Advanced Electronics Technologies and NEC Corp. (Japan)
Seiichi Tagawa, Osaka Univ. (Japan)


Published in SPIE Proceedings Vol. 3049:
Advances in Resist Technology and Processing XIV
Regine G. Tarascon-Auriol, Editor(s)

© SPIE. Terms of Use
Back to Top