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Proceedings Paper

Process techniques for improving post-exposure delay stability in chemically amplified resists
Author(s): Sassan Nour; Edward K. Pavelchek; Tracy K. Lindsay; Matthew L. Moynihan; Lori Gambin
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Paper Abstract

The post-exposure delay (PED) stability of several chemically amplified DUV resists in unfiltered environments is shown to be strongly dependent on the standing wave intensity. The use of a bottom antireflective layer diminishes the rate of CD change for UVIIHSTM, UVIIITM, APEX-E and UV5TM resists by a factor of three or greater. Increasing the post exposure bake to diffuse outstanding waves results in a three to six fold improvement with UVIIHS, UVIII, UV5 and UV6TM. These resists show the greatest stability when soft baked at high temperatures to reduce the diffusion rate of airborne contaminants, and post-exposure baked at high temperatures to diffuse out the standing wave pattern.

Paper Details

Date Published: 7 July 1997
PDF: 14 pages
Proc. SPIE 3049, Advances in Resist Technology and Processing XIV, (7 July 1997); doi: 10.1117/12.275815
Show Author Affiliations
Sassan Nour, Shipley Co. (United States)
Edward K. Pavelchek, Shipley Co. (United States)
Tracy K. Lindsay, Shipley Co. (United States)
Matthew L. Moynihan, Shipley Co. (United States)
Lori Gambin, Shipley Co. (United States)


Published in SPIE Proceedings Vol. 3049:
Advances in Resist Technology and Processing XIV
Regine G. Tarascon-Auriol, Editor(s)

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