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Proceedings Paper

Influence of optical nonlinearities of the photoresist on the photolithographic process: applications
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Paper Abstract

Using a new simulation method, the influence of refractive index changes during the bleaching of the photoresist on process parameters is investigated. For standard applications using thin resists, refractive index changes above 0.1 result in considerably modified dose latitudes, swing curves and iso- dense bias. In special applications with thick resists, the same effect occurs for much smaller refractive index changes. Optimized refractive index changes can be used for the fabrication of structures with high aspect ratios.

Paper Details

Date Published: 7 July 1997
PDF: 11 pages
Proc. SPIE 3048, Emerging Lithographic Technologies, (7 July 1997); doi: 10.1117/12.275810
Show Author Affiliations
Andreas Erdmann, Fraunhofer-Institut for Silicon Technology (Germany)
Clifford L. Henderson, Univ. of Texas/Austin (United States)
C. Grant Willson, Univ. of Texas/Austin (United States)
Wolfgang Henke, Fraunhofer-Institut for Silicon Technology (Germany)

Published in SPIE Proceedings Vol. 3048:
Emerging Lithographic Technologies
David E. Seeger, Editor(s)

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