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Proceedings Paper

Positive-tone conducting electron-beam resists
Author(s): Maggie A. Z. Hupcey; Christopher Kemper Ober
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Paper Abstract

Many lithographic methods are being examined for high throughput, sub- 0.15 micrometer lithography including e-beam lithography. With current resist materials, high throughput and resolution is limited by charging of the insulating resist which leads to image distortion of the pattern. We have developed a new family of resists based upon graft copolymers of PMMA and poly(hexylthiophene) that offer fast (less than 30 (mu) C/cm2) positive-tone imaging with the ability to provide for charge dissipation.

Paper Details

Date Published: 7 July 1997
PDF: 5 pages
Proc. SPIE 3048, Emerging Lithographic Technologies, (7 July 1997); doi: 10.1117/12.275808
Show Author Affiliations
Maggie A. Z. Hupcey, Cornell Univ. (United States)
Christopher Kemper Ober, Cornell Univ. (United States)


Published in SPIE Proceedings Vol. 3048:
Emerging Lithographic Technologies
David E. Seeger, Editor(s)

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