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Proceedings Paper

Fabrication of submicron topology with ion- and neutral-beam etching
Author(s): Ilja P. Soshnikov; Alexander V. Lunev; M. E. Gaevski; Lolita G. Rotkina; Nicolai A. Bert
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Paper Abstract

Recently the microelectronics devices fabricated on the basis of the topological structures with conic or point elements are applied widely. The traditional method of formation of the structures using an electron beam lithography, a chemical or ion beam (plasma) etching has some disadvantages. For example, the chemical etching of the submicron elements has rather low reproducibility of the geometry profile. It is clearly displayed in the formation of relief in the mesa of the submicron size. The electronic lithography and the polishing ion etching method of the cone formation is complicated due to the problem with the stability of the masking material and the resolution. What is more important the problem of the compatibility with other technological operations of the microelectronics fabrication. The authors offer the simple and reproducible method of fabrication of the submicron structure of a cone type. It bases on the formation of the surface relief by the neutral projectiles sputtering. The present paper reports the possibility of the cone relief fabrication on the wide surface and in the narrow submicron mesa by the argon neutral bombardment.

Paper Details

Date Published: 7 July 1997
PDF: 5 pages
Proc. SPIE 3048, Emerging Lithographic Technologies, (7 July 1997); doi: 10.1117/12.275806
Show Author Affiliations
Ilja P. Soshnikov, A.F. Ioffe Physical-Technical Institute (Russia)
Alexander V. Lunev, A.F. Ioffe Physical-Technical Institute (Russia)
M. E. Gaevski, A.F. Ioffe Physical-Technical Institute (Russia)
Lolita G. Rotkina, A.F. Ioffe Physical-Technical Institute (Russia)
Nicolai A. Bert, A.F. Ioffe Physical-Technical Institute (Russia)

Published in SPIE Proceedings Vol. 3048:
Emerging Lithographic Technologies
David E. Seeger, Editor(s)

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