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Proceedings Paper

CD variation in 30-kV EBL due to resist heating: experiment and simulation
Author(s): Sergey V. Babin; Peter Hudek; Ivan Kostic; Igor Yu. Kuzmin
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Paper Abstract

Distortion of critical dimension (CD) is an important problem in electron beam lithography. Two main reasons for the distortions are proximity effects and resist heating. The influence of both these factors is examined for a 30 kV variably shaped electron beam lithography system. A change of linewidth with exposure dose was experimentally measured at variable exposure conditions of a pattern. In this way, the influence of resist heating was varied while electron scattering was constant. A simulation method was developed that allows one to take into account the contribution of proximity effects and resist heating to a linewidth change. An advanced model of resist heating was used for simulation. This method can be used to predict CD change. A technique for determination of a heat-to-dose transfer coefficient was proposed.

Paper Details

Date Published: 7 July 1997
PDF: 6 pages
Proc. SPIE 3048, Emerging Lithographic Technologies, (7 July 1997); doi: 10.1117/12.275800
Show Author Affiliations
Sergey V. Babin, Set-Service (Russia) and Etec Systems, Inc. (United States)
Peter Hudek, Institute of Computer Systems (Slovak Republic)
Ivan Kostic, Institute of Computer Systems (Slovak Republic)
Igor Yu. Kuzmin, Set-Service (Russia)

Published in SPIE Proceedings Vol. 3048:
Emerging Lithographic Technologies
David E. Seeger, Editor(s)

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