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Proceedings Paper

Measurement of midspatial frequency scatter in extreme ultraviolet lithography systems using direct aerial image measurements
Author(s): Charles H. Fields; Avijit K. Ray-Chaudhuri; Kevin D. Krenz; William G. Oldham; Richard H. Stulen
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Paper Abstract

The technique of direct aerial image measurements (AIM) is applied to the evaluation of the mid-spatial frequency scatter produced form an extreme ultraviolet (EUV) laser plasma based microlithography testbed at Sandia National Laboratories in Livermore, Calif. AIM provides an at-wavelength technique for the in-situ characterization of the EUV images produced from the Scharzchild 10X reduction camera. The AIM technique measures the aerial images of the system by sampling the light intensity that passes through a narrow scanning slit (90 nm) and impinges upon a silicon photodiode designed to have a high quantum efficiency at EUV wavelengths. The measurements scan the slit artifact at the image plane across a step-function aerial image generated by the 10X reduction camera. The results of these measurements produce a measurement of the baseline scattered light and the modulation transfer function (MTF). Comparison of the measured MTF with simulated MTFs produces a measure of the combined multi-layer surface roughness variance ((sigma) rms2).

Paper Details

Date Published: 7 July 1997
PDF: 12 pages
Proc. SPIE 3048, Emerging Lithographic Technologies, (7 July 1997); doi: 10.1117/12.275798
Show Author Affiliations
Charles H. Fields, Univ. of California/Berkeley (United States)
Avijit K. Ray-Chaudhuri, Sandia National Labs. (United States)
Kevin D. Krenz, Sandia National Labs (United States)
William G. Oldham, Univ. of California/Berkeley (United States)
Richard H. Stulen, Sandia National Labs. (United States)


Published in SPIE Proceedings Vol. 3048:
Emerging Lithographic Technologies
David E. Seeger, Editor(s)

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