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Proceedings Paper

Process development for 180-nm structures using interferometric lithography and i-line photoresist
Author(s): Xiaolan Chen; Zhao Zhang; Steven R. J. Brueck; Ronald A. Carpio; John S. Petersen
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Paper Abstract

A bilayer positive I-line process, based upon the use of a bottom antireflective coating and implementable on a standard processing track, is described for the production of sub-0.2- micrometer features by interferometric lithography. Pattern collapse for small, high-aspect ratio photoresist features was found to be a significant issue. The impact of a number of processing variables on pattern collapse was investigated. These variables included resist thickness, substrate reflectivity, developer concentration, post exposure bake (PEB) time and temperature, L/S pitch differences, and development and drying methods. Using a 0.8-micrometer resist thickness, a feature width of 180 nm (360-nm pitch) was attainable without a PEB, while with a suitable PEB, 150-nm features could be obtained. A reduction of resist thickness to 0.6-micrometer enables 120 nm features to be obtained without a PEB, and 100-nm features with a PEB.

Paper Details

Date Published: 7 July 1997
PDF: 10 pages
Proc. SPIE 3048, Emerging Lithographic Technologies, (7 July 1997); doi: 10.1117/12.275793
Show Author Affiliations
Xiaolan Chen, Univ. of New Mexico (United States)
Zhao Zhang, Univ. of New Mexico (United States)
Steven R. J. Brueck, Univ. of New Mexico (United States)
Ronald A. Carpio, SEMATECH (United States)
John S. Petersen, SEMATECH (United States)


Published in SPIE Proceedings Vol. 3048:
Emerging Lithographic Technologies
David E. Seeger, Editor(s)

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