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Proceedings Paper

Highly accurate alignment technology for electron-beam lithography in mix-and-match with optical stepper
Author(s): Yoshinori Nakayama; Yasuko Gotoh; Norio Saitou; Hajime Hayakawa; Minoru Sasaki
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Paper Abstract

A novel alignment technology for electron-beam lithography is proposed for hybrid use with i-line steppers. This alignment technology was developed based on the evaluation of alignment characteristics and on the investigation of alignment errors in electron-beam lithography systems used in the mix-and-match process. In this alignment method, global alignment using representative chips on a wafer effectively achieves accurate overlay and high throughput. Overlay measurements showed that the deviation in the alignment error is smaller than 70 nm within 3 sigma.

Paper Details

Date Published: 7 July 1997
PDF: 9 pages
Proc. SPIE 3048, Emerging Lithographic Technologies, (7 July 1997); doi: 10.1117/12.275784
Show Author Affiliations
Yoshinori Nakayama, Hitachi, Ltd. (Japan)
Yasuko Gotoh, Hitachi, Ltd. (Japan)
Norio Saitou, Hitachi, Ltd. (Japan)
Hajime Hayakawa, Hitachi, Ltd. (Japan)
Minoru Sasaki, Hitachi, Ltd. (Japan)


Published in SPIE Proceedings Vol. 3048:
Emerging Lithographic Technologies
David E. Seeger, Editor(s)

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