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Proceedings Paper

Scattered-light alignment system using SiC mask for x-ray lithography
Author(s): Tsutomu Miyatake; Masaoki Hirose; Tsutomu Shoki; Ryo Ohkubo; Kuniaki Yamazaki
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Paper Abstract

We propose a novel alignment method using scattered-light, which has high sensitivity to a silicon carbide x-ray mask without coating antireflection films and opaque film. The scattered-light alignment system is a video-based alignment utilizing the white-light (lambda equals 400 - 700 nm in wavelength) scatted on pattern edge of the alignment marks. A two dimensional periodic array is used for both mask and wafer marks. The scattered-light are focused onto field charge coupled devices camera through lenses by a magnification of 100 times. The alignment optical unit equipped with the field camera is located out of x-ray exposure field. Mask to wafer displacement is detected by means of video image processing. We have obtained position-sensing repeatability of 4.8 nm (3 sigma) by using combination between the polished silicon carbide mask and nitride processed wafer. The alignment signal indicated a high signal to noise ratio of 41.9 and 33.4 dB for the mask and wafer marks, respectively.

Paper Details

Date Published: 7 July 1997
PDF: 12 pages
Proc. SPIE 3048, Emerging Lithographic Technologies, (7 July 1997); doi: 10.1117/12.275780
Show Author Affiliations
Tsutomu Miyatake, Sumitomo Heavy Industries, Ltd. (Japan)
Masaoki Hirose, Sumitomo Heavy Industries, Ltd. (Japan)
Tsutomu Shoki, HOYA Corp. (Japan)
Ryo Ohkubo, HOYA Corp. (Japan)
Kuniaki Yamazaki, Nippon Motorola, Ltd. (United States)

Published in SPIE Proceedings Vol. 3048:
Emerging Lithographic Technologies
David E. Seeger, Editor(s)

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