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Proceedings Paper

Membrane distortions in x-ray masks due to specific absorber features
Author(s): Adam H. Fisher; Roxann L. Engelstad; Matthew F. Laudon
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Paper Abstract

Finite element models have been created to investigate the local effect of pattern placement and absorber stresses. Models of an x-x ray mask membrane have been developed which include a centrally-located absorber strip. Using these models, the magnitude and location of the maximum in-plane distortions (IPD) and out-of-plane distortions (OPD) have been determined. The IPD data from the finite element models for the absorber strip have been compared to a closed-form analytical solution. In addition, the finite element models have been further developed to include feature patterns more closely resembling the absorber patterning used in the manufacturing of actual circuit designs. In this paper, finite element results of both the local and global in-plane distortions due to the placement of the numerous absorber features are presented. With these models it is possible to predict the distortion of the membrane due to absorber features prior to the construction of the mask, allowing this modeling process to be used as a predictive tool to correct for pattern placement errors in the e-beam writing process.

Paper Details

Date Published: 7 July 1997
PDF: 9 pages
Proc. SPIE 3048, Emerging Lithographic Technologies, (7 July 1997); doi: 10.1117/12.275771
Show Author Affiliations
Adam H. Fisher, Univ. of Wisconsin/Madison (United States)
Roxann L. Engelstad, Univ. of Wisconsin/Madison (United States)
Matthew F. Laudon, EPFL (Switzerland)


Published in SPIE Proceedings Vol. 3048:
Emerging Lithographic Technologies
David E. Seeger, Editor(s)

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