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Proceedings Paper

Impact of the Coulomb interaction effect on delineating densely repeated 0.1-μm patterns using electron-beam block exposure
Author(s): Kimitoshi Takahashi; Satoru Yamazaki; Manabu Ohno; Hitoshi Watanabe; Takayuki Sakakibara; Masami Satoh; Takeo Nagata; Akio Yamada; Hiroshi Yasuda; Yasuo Nara; Nobuo Sasaki
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Paper Abstract

In the electron beam (e-beam) block exposure lithography, the coulomb interaction effect is a critical problem. In this paper, impact of the coulomb interaction effect on delineating 0.1 micrometer/0.2 micrometer L/S patterns is investigated. We have delineated 0.1 micrometer/0.2 micrometer L/S patterns and have found that line widths and delineation conditions are greatly dependent on the shot current. Two methods for reducing the shot current were examined. By narrowing the line width of L/S patterns from 0.15 micrometer to 0.05 micrometer, the contrast of the e-beam profile increased from 16% to 87% and the dose latitude increased from 0 (mu) C/cm2 to 18 (mu) C/cm2. On the other hand, by reducing the shot size from 4.5 micrometer multiplied by 4.5 micrometer to 1.5 micrometer multiplied by 4.5 micrometer, the contrast of the e-beam profile increased from 16% to 61% and the dose latitude increased from 0 (mu) C/cm2 to 4 (mu) C/cm2. Even though both methods reduce the shot current 1/3, further resolution enhancement is obtained for the former method. We have found that reducing shot current by narrowing the line width is preferable in order to enhance the resolution of L/S patterns.

Paper Details

Date Published: 7 July 1997
PDF: 10 pages
Proc. SPIE 3048, Emerging Lithographic Technologies, (7 July 1997); doi: 10.1117/12.275768
Show Author Affiliations
Kimitoshi Takahashi, Fujitsu Labs. Ltd. (Japan)
Satoru Yamazaki, Fujitsu Ltd. (Japan)
Manabu Ohno, Fujitsu VLSI Ltd. (Japan)
Hitoshi Watanabe, Fujitsu Ltd. (Japan)
Takayuki Sakakibara, Fujitsu VLSI Ltd. (Japan)
Masami Satoh, Fujitsu Labs. Ltd. (Japan)
Takeo Nagata, Fujitsu Labs. Ltd. (Japan)
Akio Yamada, Fujitsu Ltd. (Japan)
Hiroshi Yasuda, Fujitsu Ltd. (Japan)
Yasuo Nara, Fujitsu Labs. Ltd. (Japan)
Nobuo Sasaki, Fujitsu Labs. Ltd. (Japan)


Published in SPIE Proceedings Vol. 3048:
Emerging Lithographic Technologies
David E. Seeger, Editor(s)

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