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Proceedings Paper

Modeling of master oscillator-power amplifier (MOPA) semiconductor lasers
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Paper Abstract

Monolithically integrated flared amplifier master oscillator power amplifier (MFA-MOPA) semiconductor lasers are studied theoretically using a high resolution computational model which resolved times and longitudinal and transverse space dependencies and includes Lorentzian gain and dispersion spectra. The simulations show that, by altering the linear flare of the power amplifier into a nonlinear, trumpet- shaped flare, the dynamic stability range of the MOPA is increased by a factor of 3. This enables the MOPA to maintain a stable, nearly diffraction limited output beam for higher currents before the onset of transverse instabilities, large beam divergence and facet damage due to filamentation. Thus the MOPA will be able to emit an output beam of significantly higher power and brightness.

Paper Details

Date Published: 6 June 1997
PDF: 9 pages
Proc. SPIE 2994, Physics and Simulation of Optoelectronic Devices V, (6 June 1997); doi: 10.1117/12.275630
Show Author Affiliations
Peter M. W. Skovgaard, National Univ. of Ireland College Cork (Denmark)
John Gerard McInerney, National Univ. of Ireland College Cork/Univ of Arizona (United States)
Jerome V. Moloney, Optical Sciences Ctr./Univ. of Arizona (United States)
Robert A. Indik, Optical Sciences Ctr./Univ. of Arizona (United States)
Cun-Zheng Ning, Optical Sciences Ctr./Univ. of Arizona (United States)


Published in SPIE Proceedings Vol. 2994:
Physics and Simulation of Optoelectronic Devices V
Marek Osinski; Weng W. Chow, Editor(s)

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